. Device physics for engineering design of heavily doped regions in pn-junction silicon solar cells. Solar batteries. 61 O Q. 0.8 vV- (^m) £ Figure 5.5 T+ versus UV for S = 5 x 10 cm/sec. Fermi-Dirac statistics and bandgap narrowing are included: (A) Lanyon-Tuft, (B) Hauser, and (C) Slotbocn-DeGraaff. Please note that these images are extracted from scanned page images that may have been digitally enhanced for readability - coloration and appearance of these illustrations may not perfectly resemble the original work.. Shibib, Muhammed Ayman.

. Device physics for engineering design of heavily doped regions in pn-junction silicon solar cells. Solar batteries. 61 O Q. 0.8 vV- (^m) £ Figure 5.5 T+ versus UV for S = 5 x 10 cm/sec. Fermi-Dirac statistics and bandgap narrowing are included: (A) Lanyon-Tuft, (B) Hauser, and (C) Slotbocn-DeGraaff. Please note that these images are extracted from scanned page images that may have been digitally enhanced for readability - coloration and appearance of these illustrations may not perfectly resemble the original work.. Shibib, Muhammed Ayman. Stock Photo

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